SEMIX453GB12VS ? by semikron rev. 2 ? 16.02.2011 1 semix ? 3s gb SEMIX453GB12VS features ? homogeneous si ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? dynamic values apply to the following combination of resistors: r gon,main = 0,5 ? r goff,main = 0,5 ? r g,x = 2,2 ? r e,x = 0,5 ? absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 175 c t c =25c 673 a t c =80c 513 a i cnom 450 a i crm i crm = 3xi cnom 1350 a v ges -20 ... 20 v t psc v cc = 600 v v ge 15 v v ces 1200 v t j =125c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 516 a t c =80c 385 a i fnom 450 a i frm i frm = 3xi fnom 1350 a i fsm t p = 10 ms, sin 180, t j =25c 2430 a t j -40 ... 175 c module i t(rms) t terminal =80c 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =450a v ge =15v chiplevel t j =25c 1.75 2.2 v t j =150c 2.2 2.5 v v ce0 t j =25c 0.94 1.04 v t j =150c 0.88 0.98 v r ce v ge =15v t j =25c 1.8 2.6 m ? t j =150c 2.9 3.4 m ? v ge(th) v ge =v ce , i c = 18 ma 5.5 6 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 27.0 nf c oes f=1mhz 2.66 nf c res f=1mhz 2.65 nf q g v ge = - 8 v...+ 15 v 4950 nc r gint t j =25c 1.67 ? t d(on) v cc = 600 v i c =450a v ge =15v r g on =1.4 ? r g off =1.4 ? di/dt on = 6400 a/s di/dt off =4000a/s du/dt off = 6600 v/ s t j =150c 470 ns t r t j =150c 72 ns e on t j =150c 39.8 mj t d(off) t j =150c 665 ns t f t j =150c 109 ns e off t j =150c 54.4 mj r th(j-c) per igbt 0.067 k/w www..net
SEMIX453GB12VS 2 rev. 2 ? 16.02.2011 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f = 450 a v ge =0v chip t j =25c 2.1 2.46 v t j =150c 2.1 2.4 v v f0 t j =25c 1.1 1.3 1.5 v t j =150c 0.7 0.9 1.1 v r f t j =25c 1.4 1.9 2.1 m ? t j =150c 2.3 2.6 2.8 m ? i rrm i f = 450 a di/dt off =6900a/s v ge =-15v v cc = 600 v t j =150c 425 a q rr t j =150c 78.8 c e rr t j =150c 32.7 mj r th(j-c) per diode 0.12 k/w module l ce 20 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c =125c 1m ? r th(c-s) per module 0.04 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 300 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 3s gb SEMIX453GB12VS features ? homogeneous si ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac inverter drives ?ups ? electronic welding remarks ? case temperature limited to t c =125c max. ? product reliability results are valid for t j =150c ? dynamic values apply to the following combination of resistors: r gon,main = 0,5 ? r goff,main = 0,5 ? r g,x = 2,2 ? r e,x = 0,5 ?
SEMIX453GB12VS ? by semikron rev. 2 ? 16.02.2011 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SEMIX453GB12VS 4 rev. 2 ? 16.02.2011 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
SEMIX453GB12VS ? by semikron rev. 2 ? 16.02.2011 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semix 3s spring configuration
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